A silicon wafer is uniformly doped with 6.5 x 1016 phosphorous atoms/cm3 and 3.5 x 1016 boron atoms/cm3 a) Is this material n-type or p-type? b) Find electron and hole concentrations, the electron and hole mobilities and the resistivity of this silicon material at 300K. Assume ni 1010/cm3 at 300K. Mobility equations 1365 ??-52.2 + 0.68 9.68 x 1016 426 44.9 + 0.72 2.23 x 1016 Attachments: 1.png

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